Rare-earth chloride seeded growth of GaN nano- and micro-crystals
نویسندگان
چکیده
A novel rare-earth chloride seed was employed as a catalyst for growth of GaN nanoand micro-crystals on c-, aand r-plane sapphire. The ErCl3 seed on the substrate surface enhanced the growth rate and density of the GaN crystals. Distinctive green photoluminescence was measured, confirming that Er ions were active in the GaN matrix. This technique can be adapted to selectively grow GaN crystals with emission tailored to the particular optical transitions of the rare-earth seed. # 2007 Elsevier B.V. All rights reserved. PACS : 72.80.Ey; 78.55.Cr
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تاریخ انتشار 2011